BSR316P sipmos ? small-signal-transistor features ? p-channel ? enhancement mode / logic level ? avalanche rated ? pb-free lead plating; rohs compliant ? footprint compatible to sot23 maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c a t a =70 c pulsed drain current i d,pulse t a =25 c avalanche energy, single pulse e as i d =-0.36 a, r gs =25 ? mj gate source voltage v gs v power dissipation p tot t c =25 c w operating and storage temperature t j , t stg c esd class jesd22-a114-hbm soldering temperature iec climatic category; din iec 68-1 55/150/56 -55 ... 150 20 260 c 1a (250v to 500v) -0.36 -0.29 0.5 value 25 -1.44 steady state v ds -100 v r ds(on),max 1.8 ? i d -0.36 a product summary type package tape and reel information marking lead free packing BSR316P pg-sc59 l6327 = 3000 pcs. / reel lc yes non dry pg-sc59 rev 1.05 page 1 2009-02-16
BSR316P parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - ambient r thja minimal footprint, steady state - - 250 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =-250 a - - -100 v gate threshold voltage v gs(th) v ds = v gs , i d =-170 a -2 -1.5 -1 zero gate voltage drain current i dss v ds =-100 v, v gs =0 v, t j =25 c - -0.1 -1 a v ds =-100 v, v gs =0 v, t j =150 c - -10 -100 gate-source leakage current i gss v gs =-20 v, v ds =0 v - -10 -100 na drain-source on-state resistance r ds(on) v gs =-4.5 v, i d =-0.33 a - 1.8 2.2 ? v gs =-10 v, i d =-0.36 a - 1.3 1.8 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =-0.29 a 0.3 0.5 - s values rev 1.05 page 2 2009-02-16
BSR316P parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 124 165 pf output capacitance c oss -2533 reverse transfer capacitance c rss -1320 turn-on delay time t d(on) -58ns rise time t r -69 turn-off delay time t d(off) - 71 106 fall time t f -2639 gate char g e characteristics 2) gate to source charge q gs - 0.3 0.4 nc gate to drain charge q gd - 1.6 2.4 gate charge total q g - 5.3 7.0 gate plateau voltage v plateau - -2.7 - v reverse diode diode continuous forward current i s - - -0.36 a diode pulse current i s,pulse - - -1.44 diode forward voltage v sd v gs =0 v, i f =0.36 a, t j =25 c - -0.8 -1.1 v reverse recovery time t rr - 40.6 - ns reverse recovery charge q rr - 46.4 - nc 2) see figure 16 for gate charge parameter definition t c =25 c values v gs =0 v, v ds =-25 v, f =1 mhz v dd =-50 v, v gs =-10 v, i d =-0.36 a, r g =6 ? v dd =-80 v, i d =-0.36 a, v gs =0 to - 10 v v r =-50 v, i f =| i s |, d i f /d t =100 a/s rev 1.05 page 3 2009-02-16
BSR316P 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); | v gs | 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t 100 s 1 ms 10 ms 100 ms dc 10 3 10 2 10 1 10 0 10 -1 10 1 10 0 10 -1 10 -2 10 -3 -v ds [v] -i d [a] limited by on-state resistance single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 3 10 2 10 1 10 0 10 -1 t p [s] z thjs [k/w] 0 0.1 0.2 0.3 0.4 0.5 0.6 0 40 80 120 160 t a [c] p tot [w] 0 0.1 0.2 0.3 0.4 0 40 80 120 160 t a [c] -i d [a] rev 1.05 page 4 2009-02-16
BSR316P 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j -3 v -3.2 v -3.5 v -4 v -4.5 v -5 v -7 v -10 v 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 0.4 0.8 1.2 1.6 -i d [a] r ds(on) [ ? ] 25 c 150 c 0 0.2 0.4 0.6 0.8 1 012345 -v gs [v] -i d [a] 0 0.2 0.4 0.6 0.8 1 0.0 0.2 0.4 0.6 -i d [a] g fs [s] -2.5 v -3 v -3.5 v -4 v 4.5 v 6 v 7 v 10 v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 01234 -v ds [v] i d [a] rev 1.05 page 5 2009-02-16
BSR316P 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =-0.36 a; v gs =-10 v v gs(th) =f( t j ); v gs = v ds ; i d =-170 a 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ. 98 % 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 t j [c] r ds(on) [ ? ] ciss coss crss 10 3 10 2 10 1 0 20406080100 -v ds [v] c [pf] typ 2 % 98 % 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 t j [c] -v gs(th) [v] 25 c 150 c 25 c, 98% 150 c, 98% 10 1 10 0 10 -1 10 -2 0 0.4 0.8 1.2 1.6 -v sd [v] i f [a] rev 1.05 page 6 2009-02-16
BSR316P package outline sc-59: outline footprint packaging tape dimensions in mm rev 1.05 page 7 2009-02-16
BSR316P 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 ? v gs =f( q gate ); i d =-0.36 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =-250 a 90 95 100 105 110 115 120 -60 -20 20 60 100 140 t j [c] -v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 125 c 10 3 10 2 10 1 10 0 10 0 10 -1 10 -2 t av [s] -i av [a] 20 v 50 v 80 v 0 1 2 3 4 5 6 7 8 9 10 0123456 - q gate [nc] - v gs [v] rev 1.05 page 8 2009-02-16
BSR316P published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2006. a ll rights reserved. a ttention please! the information given in this data sheet shall in no event be r egarded as a guarantee of conditions o characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typica values stated herein and/or any information regarding the appli cation of the device, infineon technologie s hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third p arty information for further information on technology, delivery terms and condi tions and prices please contact your neares infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the type s in question please contact your nearest infineon technologies o ffice . infineon technologies components may only be used in life-suppo rt devices or systems with the expres s written approval of infineon technologies, if a failure of suc h components can reasonably be expected t o cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be impl anted in the human body, or to support and/o r maintain and sustain and/or protect human life. if they fail, i t is reasonable to assume that the health of th e user or other persons may be endangered . rev 1.05 page 9 2009-02-16
|
